A966 transistor datasheet pdf storage

C datasheet pdf sorry for the trouble, but it is c datasheet hard to diagnostic via internet. Junction, storage temperature tj, t stg 150, 55150 c electrical characteristics t a 25c unless otherwise specified parameter symbol min. The first highfrequency transistor was the surfacebarrier germanium transistor developed by philco in 1953, capable of operating up to 60 mhz. Hence comparing the schematic symbol to the pn junction in figure 4, we see the anode is the ptype semiconductor and the cathode is the ntype semiconductor. Power supply control ic dap 07 smd datasheet, cross reference, circuit and application notes in pdf format. A966 datasheet, a966 pdf, a966 data sheet, a966 manual, a966 pdf, a966, datenblatt, electronics a966, alldatasheet, free, datasheet, datasheets, data sheet, datas. On special request, these transistors can be manufactured in different pin configurations. Operating and storage junction temperature range tj, tstg. B 100ma 50v digital transistors with builtin resistors dtc114em dtc114ee dtc114eua. Dap07 datasheet pdf etc delivery times may vary, especially during peak periods. A143 datasheet, a143 pdf, a143 data sheet, datasheet, data sheet, pdf. Toshiba transistor silicon pnp epitaxial type 2sa1837.

Toshiba transistor silicon pnp epitaxial type pct process. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. These were made by etching depressions into an ntype germanium base from both sides with jets of indiumiii sulfate until it was a few tenthousandths of an inch thick. A966 datasheet, a966 pdf, a966 data sheet, datasheet, data sheet, pdf. Transistors are very useful, they are the building blocks of modern systems. Toshiba, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. A966 datasheet pnp transistor toshiba, pdf, pinout, equivalent, replacement, schematic, manual, data, circuit, parts, datasheet.

Elektronische bauelemente npn plastic encapsulated transistor 14feb2011 rev. For example a modern computer cpu will contain over a billion. B 23 zpackaging specifications zequivalent circuit tl emt3 smt3 sptumt3 dtc114ee dtc114em part no. Free device maximum ratings rating symbol value unit collector.

Complement to 2sc1061 absolute maximum ratings t a25. Junction, storage temperature tj, tstg 150, 55150 c electrical characteristics ta 25c unless otherwise specified parameter symbol min typ max unit test condition collector to base breakdown voltage vbrcbo 80 v ic0. Savantic semiconductor product specification silicon npn power transistors 2sd381 description. This item will be shipped through the global shipping program and includes international tracking. A952 datasheet, equivalent, cross reference search. Data sheets contain information regarding a product macom technology solutions is considering for development. Max unit collector cutoff current i cbo vcb 50 v, ie 0 0. The transistor is subdivided into four groups q, r, s and e. Tip41a tip41b tip41c np n epitaxial silicon transistor. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type no.

Nte966 datasheet, nte966 pdf, nte966 data sheet, nte966 manual, nte966 pdf, nte966, datenblatt, electronics nte966, alldatasheet, free, datasheet, datasheets, data. Dtc114em dtc114ee dtc114eua transistors dtc114eka dtc114esa rev. Apr 25, 2020 about 71% of these are integrated circuits, 7% are other electronic components. Base jedec to92 eiaj sc43 electrical characteristics ta 25c weight. Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. Product specification silicon npn power transistors description with to3phis. Storage temperature range symbol vcbo vceo vebo ig ib pc tj tstg rating120120510020 300 12555125 unit v v v ma ma mw c c 1.

Elektronische bauelemente npn plastic encapsulated transistor. Pnp resistorequipped transistor see simplified outline, symbol and pinning for package details. Darlington power transistors npn silicon page 110612 v1. Unit test conditions collector to base breakdown voltage vbrcbo60 v ic 50a, i e0 collector to emitter breakdown voltage vbrceo 50 v ic 1ma, ib0. Storage temperature range tstg 55125 c electrical characteristics ta 25c characteristics symbol test condition min typ. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Toshiba transistor silicon pnp epitaxial type pct process 2sa966. The electrical characteristics and equivalent circuit. Diode schematic symbol and actual picture of a common 1n914 diode the black stripe in the picture is the cathode. Absolute maximum ratings ta 25c characteristics symbol rating unit collectorbase voltage vcbo. Npn silicon epitaxial planar transistor for switching and af amplifier applications. Npn silicon transistor pin connection descriptions switching application interface circuit and driver circuit application features with builtin bias resistors simplify circuit design reduce a quantity of parts and manufacturing process high packing density ordering information type. Toshiba transistor silicon npn epitaxial type pct process.

K168 2sk168 components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. C3752 datasheet pdf sanyo semiconductor corporation. A voltage or current applied to one pair of the transistors terminals controls the current through another pair of terminals. B1151 datasheet 2sb1151, pnp transistor nec, b1151 pdf, b1151 pinout, equivalent, replacement, schematic, b1151 manual, b1151 data. Any and all information described or contained herein are subject to change without notice due to producttechnology improvement, etc. Select the part name and then you can download the datasheet in pdf format. Jun 22, 2019 2sk2545 datasheet pdf 2sk toshiba field effect transistor silicon n channel mos type tmosv. Or just search the transistor part number like 2sc cc1061 search through the posts until you find one of marks posts.

C unless specified otherwise description symbol value. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. A line indicates lead pbfree package or lead pbfree finish. Jun 25, 2019 b1151 datasheet 2sb1151, pnp transistor nec, b1151 pdf, b1151 pinout, equivalent, replacement, schematic, b1151 manual, b1151 data. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation tc25. This device has been designed bf datasheet for classb operation.

In certain cases, the quoted collector current may be exceeded. Performance is based on target specifications, simulated results, andor prototype measurements. Elektronische bauelemente npn plastic encapsulated. Jul 28, 2019 c datasheet pdf sorry for the trouble, but it is c datasheet hard to diagnostic via internet. Power supply control ic dap 07 datasheet, cross reference, circuit and application notes in pdf format. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.

This datasheet contains datsheet on a product bt199 has been discontinued by fairchild semiconductor. Toshiba transistor silicon pnp epitaxial type pct process 2sa966 audio power amplifier applications complementary to 2sc2236 and 3w output applications. Toshiba transistor silicon pnp epitaxial type 2sa1837 power amplifier applications driver stage amplifier applications high transition frequency. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A733 pnp epitaxial silicon transistor elite enterprises h. Toshiba transistor silicon npn epitaxial type 2sc2878. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. The circuit schematic symbol of a diode is shown in figure 5. Continental device india limited an isots 16949, iso 9001 and iso 14001 certified company pnp epitaxial planar silicon transistor csa952 9aw to92 bce marking.

753 1484 146 662 870 1392 362 722 1066 771 1206 214 59 1508 1521 129 1410 37 1588 742 376 58 1506 491 1442 459 166 329 1445 335 245 1073